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Journal Articles

ESR characterization of activation of implanted phosphorus ions in silicon carbide

Isoya, Junichi*; Oshima, Takeshi; Oi, Akihiko; Morishita, Norio; Ito, Hisayoshi

Nuclear Instruments and Methods in Physics Research B, 206, p.965 - 968, 2003/05

 Times Cited Count:8 Percentile:50.24(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H-SiC

Ito, Hisayoshi; T.Troffer*; C.Peppermuller*; G.Pensl*

Applied Physics Letters, 73(10), p.1427 - 1429, 1998/09

 Times Cited Count:31 Percentile:76.91(Physics, Applied)

no abstracts in English

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